8 Common Kinds of Failure Causes and Solutions of MOSFETs
Avalanche failure: When the voltage is too high, it can cause a breakdown between drain sources, causing avalanche failure of components. To avoid this situation, it can be solved by reducing voltage, designing absorption circuits, or selecting appropriate gate resistors.
SOA failure: If it exceeds the safe working area, it can lead to issues such as overcurrent, overheating, and thermal breakdown, resulting in SOA failure. To avoid this situation, it is necessary to ensure power-limiting conditions, design overcurrent protection functions, and add measures such as heat sinks or fans.
Diode failure: The destruction of parasitic diodes can lead to freewheeling problems. To solve this problem, a fast body diode characteristic MOSFET or two back-to-back MOSFETs can be selected in series.
Resonance failure: The oscillation caused by parasitic parameters of the gate and circuit can lead to resonance failure issues. To avoid this situation, methods such as inserting gate resistors and using synchronous or balanced driving methods can be used.
Static electricity failure: Static electricity damage to the human body or equipment is a common cause of static electricity failure. To avoid this situation, anti-static measures need to be taken, such as adding grounding wires or metal mesh.
Gate breakdown: Excessive gate voltage can cause reverse breakdown between the gate and the substrate, resulting in gate breakdown failure. To avoid this situation, the gate voltage can be limited or a series current limiting resistor can be used to solve it.
Drain breakdown: Excessive drain voltage can cause reverse breakdown between the drain and the substrate, resulting in drain breakdown failure. To avoid this situation, methods such as limiting the drain voltage or series limiting resistors can be used.
Thermal runaway: An increase in temperature can lead to a decrease in channel resistance, forming a positive feedback loop, resulting in thermal runaway. To avoid this situation, methods such as increasing heat dissipation measures, and reducing working current and power can be used.
In short, when designing and using electronic components, it is necessary to have an understanding and understanding of various failure causes and solutions to avoid damage or safety issues. If you need help, please feel free to contact us at any time.
- +1 Like
- Add to Favorites
Recommend
- Vincotech‘s fastPACK 0 MOS and fastPACK 1 MOS Modules Featuring Cost-effective H-bridge Topology with MOSFETs
- The Differences between MOS Tube and IGBT Tube
- MOS Switch Tube Selection and Principle Application
- What is the Difference between MOS tube and IGBT?
- SOT-23 P-channel MOS BSS84 : Cost Effective Solutions for Low-voltage Applications Requiring a Low-current High-side Switch
- Miller Effect on MOS Tube Switches
- MOS’s Definition and Classification
- MOS Tube Drive Circuit Summary - Detailed Design of Various Switching Power Supply MOS Tube Drive Circuit
This document is provided by Sekorm Platform for VIP exclusive service. The copyright is owned by Sekorm. Without authorization, any medias, websites or individual are not allowed to reprint. When authorizing the reprint, the link of www.sekorm.com must be indicated.
Integrated Circuits
Discrete Components
Connectors & Structural Components
Assembly UnitModules & Accessories
Power Supplies & Power Modules
Electronic Materials
Instrumentation & Test Kit
Electrical Tools & Materials
Mechatronics
Processing & Customization
