EPC23101 – ePower™ Chipset DATASHEET
●EPC’s ePowerTM Stage and Chipset integrate input logic interface, level shifting, bootstrap charging
and gate drive buffer circuits along with eGaN output FETs. Integration is implemented using EPC’s
proprietary GaN IC technology. The end result is a Power Stage that translates logic level input to
high voltage and high current power output that is smaller in size, easier to manufacture, simpler to
design and more efficient to operate.
●Features
■Integrated high side eGaN® FET with internal gate driver and level shifter
■5 V external bias supply
■3.3 V or 5 V CMOS input logic levels
■Independent high side and low side control inputs
■Cross conduction lockout logic keeps both FETs off when logic inputs are both high at same time
■External resistors to tune SW switching times and over-voltage spikes above rail and below ground
■Robust level shifter operating for hard and soft switching conditions
■False trigger immunity from fast switching transients
■Synchronous charging for high side bootstrap supply
■Low quiescent current mode from external VDRV supply when VDD Disable Input pin is pulled up
■Undervoltage lockout for internal low side and high side bias supplies
■Active gate pull-down for HS FET and LS gate drive with loss of VDRV supply
■Chipset of compatible high and low side devices in QFN packages with optimized pinouts between the two devices
ePower™ Chipset 、 eGaN® FET 、 ePower™ IC 、 IC |
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[ Buck Converters ][ Boost Converters ][ Half-Bridge Converters ][ Full Bridge Converters ][ LLC Converters ][ Motor Drive Inverter ] |
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Datasheet |
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Please see the document for details |
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QFN |
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English Chinese Chinese and English Japanese |
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12/09/2022 |
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VERSION1.1 |
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1.5 MB |
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