EPC23101 eGaN® FET DATASHEET
●Features
■Integrated high side eGaN® FET with internal gate driver and level shifter
■5 V external bias supply
■3.3 V or 5 V CMOS input logic levels
■Independent high side and low side control inputs
■Cross conduction lockout logic keeps both FETs off when logic inputs are both high at same time
■External resistors to tune SW switching times and over-voltage spikes above rail and below ground
■Robust level shifter operating for hard and soft switching conditions
■False trigger immunity from fast switching transients
■Synchronous charging for high side bootstrap supply
■Low quiescent current mode from external VDRV supply when VDD Disable Input pin is pulled up
■Under voltage lockout for internal low side and high side bias supplies
■Active gate pull-down for HS FET and LS gate drive with loss of VDRV supply
■Chipset of compatible high and low side devices in QFN packages with optimized pin outs between the two devices
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eGaN® FET 、 ePower™ Chipset 、 Integrated high side eGaN® FET 、 ePower™ IC 、 IC 、 EVB 、 Evaluation Board |
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[ Half-Bridge Converters ][ Full Bridge Converters ][ LLC Converters ][ Motor Drive Inverter ] |
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Datasheet |
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Please see the document for details |
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QFN |
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English Chinese Chinese and English Japanese |
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December, 2022 |
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VERSION: 1.1 |
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1.5 MB |
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