EPC23101 – ePower™ Chipset Data Sheet
■EPC23101 ePower™ Chipset
●Features:
■Integrated high side eGaN® FET with internal gate driver and level shifter
■Gate driver output to drive external low side eGaN FET
■5 V external bias supply
■3.3 V or 5 V CMOS input logic levels
■Independent high side and low side control inputs
■Cross conduction lockout logic keeps both FETs off when logic inputs are both high at same time
■External resistors to tune SW switching times and over-voltage spikes above rail and below ground
■Robust level shifter operating for hard and soft switching conditions
■False trigger immunity from fast switching transients
■Synchronous charging for high side bootstrap supply
■Low quiescent current mode from external VDRV supply when VDD Disable Input pin is pulled up
■Undervoltage lockout for internal low side and high side bias supplies
■Active gate pull-down for HS FET and LS gate drive with loss of VDRV supply
■Chipset of compatible high and low side devices in QFN packages with optimized pinouts between the two devices
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eGaN® FET 、 ePower™ Chipset 、 ePower™ IC 、 FET gate 、 ePower™ Stage and Chipset |
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[ Buck ][ Boost ][ Half-Bridge ][ Full Bridge ][ LLC Converters ][ Single-Phase and Three-Phase Motor Drive Inverter ] |
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Datasheet |
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Please see the document for details |
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QFN |
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English Chinese Chinese and English Japanese |
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12/14/2021 |
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Version 1.0 |
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1.1 MB |
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