PT4430 30V N-Channel Enhancement Mode MOSFET
■RDS(ON), Vgs@10V, Ids@18A=5.5mΩ
■RDS(ON), Vgs@5V, Ids@18A=7.5mΩ
■Features
●Advanced trench process technology
●High Density Cell Design For Ultra Low On-Resistance
●High Power and Current handing capability
●Ideal for Li ion battery pack applications
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Datasheet |
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Please see the document for details |
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TSSOP-8 |
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English Chinese Chinese and English Japanese |
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2012-7-8 |
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2.3 MB |
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