PT4410 N-Channel Enhancement Mode Power MOSFET
■Description:
●The PT4410 uses advanced trench technology and design to provide excellent R-DS(ON) with low gate charge. It can be used in a wide variety of applications.
■Features:
●V-DS =30V,I-D =10A
◆R-DS(ON) < 13.5mΩ @ V-GS=10V
◆R-DS(ON) < 20mΩ @ V-GS=4.5V
●High density cell design for ultra low Rdson
●Fully characterized Avalanche voltage and current
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[ Power switching application ][ Hard switched ][ high frequency circuits ][ Uninterruptible power supply ] |
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Datasheet |
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Please see the document for details |
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SOP-8 |
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English Chinese Chinese and English Japanese |
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2017-8-25 |
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496 KB |
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