G30N02
■The G30N02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
●General Features
■High density cell design for ultra low Rdson
■Fully characterized avalanche voltage and current
■Good stability and uniformity with high EAS
■Excellent package for good heat dissipation
■Special process technology for high ESD capability
■RoHS Compliant
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[ LED power supply ] |
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Datasheet |
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Please see the document for details |
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TO-252;TO-220 |
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English Chinese Chinese and English Japanese |
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2015/11/30 |
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1.8 MB |
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