EPC2206 – Automotive 80 V (D-S) Enhancement Mode Power Transistor

PublishTime：2022-08-08

Gallium Nitride's exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.
EPC2206 eGaN® FETs are supplied only in passivated die form with solder bars.
Die Size: 6.05 x 2.3 mm
■Benefits
●Ultra High Efficiency
●No Reverse Recovery
●Ultra Low QG
●Small Footprin

Brand of Product：	EPC
Part#：	EPC2206 More Part#
Product Category：	Automotive (D-S) Enhancement Mode Power Transistor 、 eGaN® FET More
Application：	[ 48 V Automotive Power ][ Open Rack Server Architectures ][ High Power Density DC-DC Converters ][ Isolated Power Supplies ][ Class D Audio ][ Low Inductance Motor Drive ] More
Data Type：	Datasheet More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：
Language：	English Chinese Chinese and English Japanese
Date of Creation：	June 2022
Version Number：
Data Encoding：
Data Size：	1.3 MB

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