GS8958 Complementary High Density Trench MOSFET
■Advanced Trench Process Technology
■High Density Cell Design for Ultra Low On-Resistance
■Fully Characterized Avalanche Voltage and Current
■Ordering information: GS8958 (Lead (Pb)-free and halogen-free)
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Datasheet |
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Please see the document for details |
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SOP-8 |
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English Chinese Chinese and English Japanese |
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2017/10/12 |
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REV07 |
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DS-GS8958-REV07-LJ17 |
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882 KB |
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