GC8812E Dual N-Channel High Density Trench MOSFET (20V, 7A)
■Super high dense cell trench design for low R-DS(on)
■Rugged and reliable
■Battery Switch ESD Protected HBM Class-2
■Surface Mount package
■Ordering information: GC8812E(Lead(Pb)-free and halogen-free)
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Datasheet |
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Please see the document for details |
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SOT-23-6L |
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English Chinese Chinese and English Japanese |
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2018/1/8 |
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REV07 |
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DS-GC8812E-REV07 |
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708 KB |
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