HM2301 P-Channel Enhancement Mode Power MOSFET

2021-07-16
■DESCRIPTION
●The HM2301 uses advanced trench technology to provide excellent R-DS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
■GENERAL FEATURES
●V-DS= -20V,I-D= -3A,R-DS(ON)< 140mΩ@ V-GS=-2.5V,R-DS(ON)< 110mΩ@ V-GS=-4.5V
●High Power and current handing capability
●Lead free product is acquired
●Surface Mount Package

H&M SEMI

HM2301

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Part#

P-Channel Enhancement Mode Power MOSFET

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PWM ]Load switch ]Power management ]

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Datasheet

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Please see the document for details

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SOT-23

English Chinese Chinese and English Japanese

2021/03/01

v1.1

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