HM2301C P-Channel Trench Power MOSFET
●The HM2301 Cuses advanced trench technology to provide
excellent R-DS(ON), low gate charge and operation with gate
voltages as low as -2.5V. This device is suitable for use as a
battery protection or in other switching application.
■Features
●V-DS= -12V,I-D =-2.8A,R-DS(ON)< 85mΩ @V-GS=-4.5V,R-DS(ON)<115mΩ @V-GS=-2.5V
●High Power and current handing capability
●Lead free product is acquired
●Surface Mount Package
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[ Battery protection ][ Load switch ][ Power management ] |
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Datasheet |
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Please see the document for details |
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SOT-23 |
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English Chinese Chinese and English Japanese |
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2021/03/01 |
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652 KB |
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