HM2301BSR P-Channel 20V(D-S) MOSFET
The HM2301BSR is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
■Features:
●R-DS(ON)=0.48Ω@V-GS=-4.5V
●R-DS(ON)=0.67Ω@V-GS=-2.5V
●R-DS(ON)=0.95Ω@V-GS=-1.8V
●R-DS(ON)=2.20Ω@V-GS=-1.5V
●Super high density cell design for extremely low R-DS(ON)
●Exceptional on-resistance and maximum DC current capability
●Capable doing Cu wire bonding
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[ Power Management in Note book ][ Portable Equipment ][ Battery Powered System ] |
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Datasheet |
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Please see the document for details |
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SOT-523 |
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English Chinese Chinese and English Japanese |
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2021/03/01 |
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1.4 MB |
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