HM2301BSR P-Channel 20V (D-S) MOSFET
■The HM2301BSR is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
●FEATURES
■RDS(ON)= 0.48Ω @VGS=-4.5V
■RDS(ON)= 0.67Ω @VGS=-2.5V
■RDS(ON)= 0.95Ω @VGS=-1.8V
■RDS(ON)= 2.20Ω @VGS=-1.5V
■Super high density cell design for extremely low RDS(ON)
■Exceptional on-resistance and maximum DC current capability
■Capable doing Cu wire bonding
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P-Channel MOSFET 、 P-Channel logic enhancement mode power field effect transistors |
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[ Power Management ][ Note book ][ Portable Equipment ][ Battery Powered System ] |
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Datasheet |
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Please see the document for details |
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SOT-523 |
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English Chinese Chinese and English Japanese |
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2022/11/6 |
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966 KB |
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