HM2301BWKR Dual P-Channel Enhancement Mode Field Effect Transistor
■The HM2301BWKR uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 1.8V, in the small SOT363 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low current DC-DC converters. It is ESD protected to 2KV HBM.
●Features
■VDS (V) = -20V
■ID = -0.8A (VGS = -4.5V)
■RDS(ON) < 480m (VGS = -4.5V)
■RDS(ON) < 950m (VGS = -2.5V)
■RDS(ON) <2200m (VGS = -1.8V)
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Datasheet |
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Please see the document for details |
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SC70-6L;SOT-363 |
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English Chinese Chinese and English Japanese |
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2022/11/6 |
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559 KB |
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