HM4310 100V-DS/±25V-GS/140A(I-D) N-Channel Enhancement Mode MOSFET
■V-DSS=100V／V-GSS=±25V／I-D=140A
■R-DS(ON)=7.2mΩ(max.)@V-GS=10V
■Low Dense Cell Design
■Reliable and Rugged
■Advanced trench process technology
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[ Synchronous Rectification ][ Power Management in Inverter System ] |
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Datasheet |
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Please see the document for details |
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TO-220-3L |
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English Chinese Chinese and English Japanese |
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2021/03/01 |
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777 KB |
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