HM4310 100VDS／±25VGS／140A(ID) N-Channel Enhancement Mode MOSFET
■VDSS=100V／VGSS=±25V／ID=140A RDS(ON)=7.2mΩ(max.)@VGS=10V
■Low Dense Cell Design
■Reliable and Rugged
■Advanced trench process technology
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[ Power Management ][ Inverter System ] |
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Datasheet |
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Please see the document for details |
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TO-220-3L |
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English Chinese Chinese and English Japanese |
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2022/12/30 |
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694 KB |
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