UMS Newly Launches a 15W GaN Transistor CHK8101-SYC with Low Consumption of 50V@100mA, Used for RF Power Applications
The CHK 8101-SYC is an unmatched 15W GaN transistor for RF power applications up to 6GHz with High performance. It is a broadband solution for a variety of RF power applications such as multipurpose, space, and telecommunication applications.
This DC to 6GHz circuit exhibits a high power above 15W and a remarkable efficiency above 64% and low consumption of 50V @ 100mA. It can be used in pulsed and CW operating modes.
The CHK8101-SYC has been designed on UMS 0.5µm space evaluated proprietary GaN technology. It was the 1st one of a range of space-qualified hermetically packaged power transistors.
Fig.1
Main features
●15W GaN Power Packaged Transistor
●DC to 6GHz
●Pulsed and CW Operating modes
●High Power>15W
●High Efficiency up to 64%
●Gain: 19dB
●Low Consumption: 50V@100mA
●MTTF>106 hours@Tj = 200°C
●Hermetic ceramic-metal flange package
Fig.2
Maximum Gain&Stability Characteristics
Fig.3
- 【Datasheet】15W Power Packaged Transistor GaN HEMTon SiC Advanced Information
- 【Datasheet】15W Power Packaged Transistor: GaN HEMT on SiC
- 【Datasheet】CHK8101-SYC 15W Power Packaged Transistor GaN HEMT on SiC
- 【Datasheet】CHK8101-SYC 15W Power Packaged Transistor GaN HEMT on SiC
- 【Datasheet】CHK8101 - SYC 15W Power Packaged Transistor GaN HEMT on SiC
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