The New CHK8101-SYC is A 15W GaN Packaged Transistor Dedicated to Space Applications
Thanks to the support of the European GREAT2 program funded through ESA’s Basic Technology Research Programme, UMS is very proud to announce the release of the CHK8101-SYC, a 15W GaN power transistor assembled in a fully hermetic metal-ceramic flange power package.
This unmatched GaN transistor may be used for RF power applications up to 6GHz with high performance. Such level of performance has been validated thanks to a demonstration board dedicated to 1.3GHz applications, where 20W CW output power was achieved under 50V DC bias with a typical PAE of 64% and a small signal gain of 20dB.
This new product, produced on our GH50 space evaluated GaN-on-SiC technology, is now in a sampling phase. Qualification tests are ongoing, with the aim for the part to be fully Space qualified in 2022 and placed in the ESA QPL (qualified part list). This is the first of a range of space qualified hermetically packaged power transistors that are planned to be introduced as part of the ongoing GH50 Capability Approval collaboration with ESA.
- 【Datasheet】15W Power Packaged Transistor GaN HEMTon SiC Advanced Information
- 【Datasheet】15W Power Packaged Transistor: GaN HEMT on SiC
- 【Datasheet】CHK8101-SYC 15W Power Packaged Transistor GaN HEMT on SiC
- 【Datasheet】CHK8101-SYC 15W Power Packaged Transistor GaN HEMT on SiC
- 【Datasheet】CHK8101 - SYC 15W Power Packaged Transistor GaN HEMT on SiC
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