UMS CHK8101a99F 20W Power Bar GaN HEMT on SiC

PublishTime：2020-04-10

The CHK8101a99F is a 20W Gallium Nitride High Electron Mobility Transistor. This product offers a general purpose and broadband solution for a variety of RF power applicationssuch as radar and telecommunication.It is developed on a 0.5μm gate length GaN HEMT technology on SiC substrate and is compliant with the regulation in particular with the directives RoHS N°2011/65 and REACh N°1907/2006 It is proposed in a bare die form and requires an external matching circuitry.

Brand of Product：	UMS
Part#：	CHK8101a99F 、 CHK8101a99F/00 More Part#
Product Category：	20W Power Bar GaN HEMT on SiC 、 20W Power Bar More
Application：	More
Data Type：	Datasheet More
Safety & Environment Standards：	REACh 、 RoHS More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：
Language：	English Chinese Chinese and English Japanese
Date of Creation：	2019年3月19日
Version Number：	DSCHK8101a9078
Data Encoding：	DSCHK8101a9078
Data Size：	759 KB

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