UMS and Fraunhofer IIS Partner to Offer GaN and GaAs Technologies to EUROPRACTICE Customers

2023-08-02 UMS News
GaAs power semiconductors,GaN high-electron-mobility-transistor,HEMT,UMS

UMS and Fraunhofer IIS partner to offer GaN and GaAs technologies to EUROPRACTICE customers.

United Monolithic Semiconductors (UMS) and Fraunhofer Institute for Integrated Circuits (IIS) have partnered to offer high-performance GaN and GaAs technologies to EUROPRACTICE customers. The partnership will give EUROPRACTICE customers access to UMS's GaN and GaAs power semiconductors, which are used in a wide range of applications, including power converters, RF amplifiers, and LED drivers.

 

EUROPRACTICE customers now have access to

0.25μm GaN high-electron-mobility-transistor (HEMT),

0.15 μm GaN HEMT and 0.1μm GaAs Low Noise Pseudo Morphic HEMT technologies by UMS.

These processes are now offered through EUROPRACTICE MPW runs with Fraunhofer IIS functioning as a service center for the EUROPRACTICE customers interested in it.

 

UMS is very proud of our collaboration with such a well-recognized partner and delighted to offer a new customer base the opportunity to appreciate our technology quality and performance.

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