15W Power Packaged Transistor: GaN HEMT on SiC
●UMS has developed the CHK8101-SYC is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. This power bar offers general purpose and broadband solutions for a variety of RF power applications. It is well suited for multi-purpose applications such as radar and telecommunication.
●The CHK8101-SYC is developed on a 0.5μm gate length GaN HEMT process. It requires an external matching circuitry.
●The CHK8101-SYC is supplied in an hermetic ceramic-metal flange power package, compliant with the RoHs N°2011/65 and REACH N°1907/2006 directives
●Main Features
■Wide band capability: up to 6GHz
■Pulsed and CW operating modes
■High Output power: > 15W
■High Efficiency: up to 73%
■DC bias: V-DS= 50V @ ID_Q = 100mA
■MTTF > 106 hours @ Tj = 200°C
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15W Power Packaged Transistor 、 unmatched packaged Gallium Nitride High Electron Mobility Transistor 、 GaN HEMT on SiC |
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[ RF power applications ][ broadband ][ radar ][ telecommunication ] |
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Datasheet |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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19 Jan 22 |
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AI2110;AI21102019 |
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1.2 MB |
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