CHK8101-SYC 15W Power Packaged Transistor GaN HEMT on SiC
■The CHK8101-SYC is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited for multi-purpose applications such as space and telecommunication.
■The CHK8101-SYC is developed on a 0.5μm gate length GaN on SiC HEMT process. It requires an external matching circuitry. The CHK8101-SYC is supplied in a hermetic ceramic-metal flange power package, compliant with the RoHs N°2011/65 and REACH N°1907/2006 directives.
●Main Features
■Wide band capability: up to 6GHz
■Pulsed and CW operating modes
■High power: > 15W
■High Efficiency: up to 65%
■DC bias: VDS = 50V @ ID_Q = 100mA
■MTF > 106 hours @ Tj = 200°C
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Power Packaged Transistor 、 unmatched packaged Gallium Nitride High Electron Mobility Transistor 、 Transistor |
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[ space ][ telecommunication ] |
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Datasheet |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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19 Jul 22 |
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DSCHK8101-SYC2200 |
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1 MB |
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