650V/16A Silicon Carbide Schottky Diode P1D16065H with Extremely Low Switching Loss and Conduction Loss, Offers State of the Art Performance

2024-03-06 PowerSiC Semiconductor
Silicon Carbide Schottky Diode,P1D16065H

This Silicon Carbide Schottky Diode P1D16065H family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required.



Features 

Low conduction loss due to low VF 

Extremely low switching loss by tiny QC 

Highly rugged due to better surge current 

Industrial standard quality and reliability


Applications 

UPS 

Power Inverter 

High performance SMPS

Power factor correction


Maximum Ratings (at Tc=25℃, unless otherwise specified)

Thermal Resistance

Electrical Characteristic (at Tc=25℃, unless otherwise specified)

Package Marking and Ordering Information

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