SIC POWER DEVICE RoHS (SGS)Test Report(NGBMR22003742601)
■Test Requirement:
●EU RoHS Directive (EU) 2015/863 amending Annex II to Directive 2011/65/EU- Lead, Mercury, Cadmium, Hexavalent chromium, Polybrominated biphenyls (PBBs), Polybrominated diphenyl ethers (PBDEs), Bis(2-ethylhexyl) phthalate (DEHP), Butyl benzyl phthalate (BBP), Dibutyl phthalate (DBP) and Diisobutyl phthalate (DIBP)
■Conclusion:
●Pass
|
|
|
|
Test Report |
|
|
|
|
Please see the document for details |
|
|
|
|
|
|
|
|
TO-247;TO-247-2;TO-247-3;TO-247-4;TO-220-2;TO-220-2i;TO-252-2;PQFN5*6;TO-263-2;TO-263-3;TO-263-7 |
|
|
English Chinese Chinese and English Japanese |
|
|
Oct 31, 2022 |
|
|
|
|
|
NGBMR22003742601 |
|
|
669 KB |
- +1 Like
- Add to Favorites
Recommend
- SiC can Be Extremely Fast
- Vincotech’s 70A flowPACK 1 SiC Modules Featuring Ultra-fast 900V SiC MOSFET for up to 400kHz switching frequency
- What is SiC and why is SiC for power devices?
- New Flow E SiC MOSFET-based Modules Can Extend The Power Cycling Lifetime by A Factor of 2 | Vincotech
- The Encyclopedia of SiC丨SiC Crystal
- Vincotech SiC Modules Enhance Your EV Charger, Superior Thermal Performance For Increased Lifetime, Higher Power And Improved Reliability
- UnitedSiC’s Web-based FET-Jet Calculator ——Makes Selection of A SiC FET and SiC Schottky Diode for Your Power Design
- UnitedSiC‘s Gen 4 SiC FET Boasts An On-resistance per Unit Area 2~3 Times Better than for The Other SiC MOSFETs
All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.
Integrated Circuits
Discrete Components
Connectors & Structural Components
Assembly UnitModules & Accessories
Power Supplies & Power Modules
Electronic Materials
Instrumentation & Test Kit
Electrical Tools & Materials
Mechatronics
Processing & Customization
