SiC Power Devices and Modules Application Note
2021-06-17
●SiC (silicon carbide) is a compound semiconductor material composed of silicon (Si) and carbon (C). Table 1-1 shows the electrical characteristics of each semiconductor material. SiC has an excellent dielectric breakdown field intensity (breakdown field) and bandgap (energy gap): which are 10 times and 3 times greater than Si, respectively. Furthermore, control over the p-and n-types necessary for device manufacturing can be achieved in a wide range. Consequently, SiC is considered as a promising material for power devices that can exceed the limit of Si. SiC has various polytypes (crystal polymorphism), and each polytype shows different physical properties. For power devices, 4H-SiC is considered to be ideal and its monocrystalline wafers between 4 inches and 6 inches are currently mass produced.
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