SiC Power Devices Brochure

2022-03-15
●SiC Devices Contribute to Greater Energy Savings and Set Miniaturization
■High efficiency Energy-saving
▲A wider bandgap gives SiC 10x the dielectric breakdown electric field strength of silicon.
▲This allows SiC MOSFETs to operate at up to 3,000V, compared to just 1,000V with conventional silicon MOSFETs.
▲At the same time, SiC MOSFETs provide reduced ON resistances even at high voltages along with low turn ON/OFF losses, making them truly the best devices for achieving high efficiency and energy savings.
■Stable operation even at high temperatures
▲Another advantage of SiC's large bandgap is the ability to operate at high temperatures.
▲As a result, SiC can operate at 200°C or more, unlike silicon with a limit of just 150°C.
▲This is revolutionizing the way we think about system heat dissipation design and thermal safety.
▲For example, it will be possible to incorporate devices in the wheels of EVs while making inverters and their cooling systems smaller.
■Smaller peripheral circuits
▲SiC can switch high voltages at high speeds.
▲This allows the impedances of the capacitors and inductors that make up the switching regulator circuits to be reduced.
▲In other words, smaller components can be used, which has the advantage of minimizing system size.

ROHM

SiC Power DevicesSiC WaferSiC Diode(SBD)SiC MOSFETSiC Power ModuleAC/DC Converter IC

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high-speed switching SiC devices ]gate drivers ]

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Supplier and Product Introduction

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Please see the document for details

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TO-220;TO-247;TO-263;TO-268;TO263-7L;TO220-6M

English Chinese Chinese and English Japanese

02.2022

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