P1D20065A Silicon Carbide Schottky Diode 650 V, 20 A

2023-05-19
■General Description:
●This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required.
■Features:
●Low conduction loss due to low VF
●Extremely low switching loss by tiny QC
●Highly rugged due to better surge current
●Industrial standard quality and reliability

PowerSiC Semiconductor

P1D20065A

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Part#

Silicon Carbide Schottky Diode

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UPS ]Power Inverter ]High performance SMPS ]

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Datasheet

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Please see the document for details

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TO-220-2

English Chinese Chinese and English Japanese

2022/9/1

Revison 1.0

765 KB

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