650V/20A Silicon Carbide Schottky Diode P1D20065D Features with a Low Conduction Loss and Extremely Low Switching Loss
The PowerSiC Semiconductor P1D20065D Silicon Carbide Schottky Diode offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required.
Features
• Low conduction loss due to low VF
• Extremely low switching loss by tiny QC
• Highly rugged due to better surge current
• Industrial standard quality and reliability
Applications
• UPS
• Power Inverter
• High performance SMPS
• Power factor correction
Maximum Ratings (at Tc=25℃, unless otherwise specified)
Electrical Characteristic (Per leg, at Tc=25℃, unless otherwise specified)
Package Marking and Ordering Information
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