650V/10A Silicon Carbide Schottky Diode P1D10065N is Designed for High Frequency Applications Where High Efficiency and High Reliability are Required
This PowerSiC Semiconductor Silicon Carbide Schottky Diode P1D10065N family offers state-of-the-art performance. It is designed for high frequency applications where high efficiency and high reliability are required.
Features
• Low conduction loss due to low VF
• Extremely low switching loss by tiny QC
• Highly rugged due to better surge current
• Industrial standard quality and reliability
Applications
• UPS
• Power Inverter
• High performance SMPS
• Power factor correction
Maximum Ratings (at Tc=25℃, unless otherwise specified)
Thermal Resistance
Electrical Characteristic (at Tc=25℃, unless otherwise specified)
Package Marking and Ordering Information
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