650V/10A Silicon Carbide Schottky Diode P1D10065N is Designed for High Frequency Applications Where High Efficiency and High Reliability are Required

2023-11-14 PowerSiC Semiconductor
Silicon Carbide Schottky Diode,P1D10065N

This PowerSiC Semiconductor Silicon Carbide Schottky Diode P1D10065N family offers state-of-the-art performance. It is designed for high frequency applications where high efficiency and high reliability are required.




Features
• Low conduction loss due to low VF
• Extremely low switching loss by tiny QC
• Highly rugged due to better surge current
• Industrial standard quality and reliability

Applications
• UPS
• Power Inverter
• High performance SMPS
• Power factor correction


Maximum Ratings (at Tc=25℃, unless otherwise specified)

Thermal Resistance

Electrical Characteristic (at Tc=25℃, unless otherwise specified)

Package Marking and Ordering Information

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