100V/120A N-channel Enhanced Power MOSFET BLP042N10G, Featuring Fast Switching, Low On-Resistance, Low Gate Charge and Low Reverse transfer capacitances
BLP042N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench Ⅱ technology which reduces the conduction loss, improves switching performance, and enhances the avalanche energy. This is a suitable device for Synchronous rectification and high speed switching applications.
FEATURES
Fast Switching
Low On-Resistance
Low Gate Charge
Low Reverse transfer capacitances
High avalanche ruggedness
RoHS product
APPLICATIONS
Synchronous rectification
High speed switching applications
ABSOLUTE RATINGS (at TC=25℃，unless otherwise specified)
Note1：Repetitive Rating: Pulse width limited by maximum junction temperature
Note2：L=0.5mH, Ias=40A, Start TJ=25℃
Thermal characteristics
Electrical Characteristics (at TC=25℃，unless otherwise specified)
ORDERING INFORMATION
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