200V/60A Power MOSFET BLM30N20, Uses Advanced Trench Technology and Design to Provide Excellent RDS(ON) with Low Gate Charge
BLM30N20 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
FEATURES
High power and current handing capability
Lead free product is acquired
100% avalanche tested
100% ΔVds tested
RoHS product
APPLICATIONS
Load switch
Power management
ABSOLUTE RATINGS at TC=25℃, unless otherwise specified
Thermal characteristics (No FullPAK)
Electrical Characteristics at TC=25℃, unless otherwise specified
Note1: Pulse width limited by maximum junction temperature
Note2: Eas condition：Vg=10V，L=0.5mH, Vds=100V, Start TJ=25℃, Ias=11.5A
Note3: Pulse width tp≤300µs, δ≤2%
ORDERING INFORMATION
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