IGBT BLQG50T65FCKA, is Characteristic with Low VCE(sat), Having Fast recovery anti-parallel diode
BLQG50T65FCKA is obtained by advanced Trench Field Stop (T-FS) technology which is characteristic with low VCE(sat), optimized switching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications.
FEATURES
Fast Switching
Low VCE(sat)
Positive temperature coefficient
Fast recovery anti-parallel diode
RoHS product
AEC-Q101 Qualified
APPLICATIONS
Photovoltaic converters
UPS
CCU
ABSOLUTE RATINGS
Thermal characteristics
ORDERING INFORMATION
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