60V/6A Power MOSFET BLM30DN06L, Uses Advanced Trench Technology and Design to Provide Excellent RDS(ON) with Low Gate Charge
BLM30DN06L uses advanced trench technology and design to provide excellent RDS(ON) with a low gate charge. It can be used in a wide variety of applications.
Features
High power and current handing capability
Lead free product is acquired
RoHS product
Surface mount package
Applications
PWM applications
Load switch
Power management
Absolute Ratings at TC=25℃, unless otherwise specified
Thermal Characteristics
Electrical Characteristics at TC=25℃, unless otherwise specified
Ordering Informations
- +1 Like
- Add to Favorites
Recommend
- 200V/60A Power MOSFET BLM30N20, Uses Advanced Trench Technology and Design to Provide Excellent RDS(ON) with Low Gate Charge
- -40V/-5A Power MOSFET BLM80P04, Using Advanced Trench Technology and Design to Provide Excellent RDS(ON) with Low Gate Charge
- 100V/120A N-channel Enhanced Power MOSFET BLP042N10G, Featuring Fast Switching, Low On-Resistance, Low Gate Charge and Low Reverse transfer capacitances
- 650V/50A IGBT BLG50T65FDLA which is Characteristic with Low VCE(sat), Optimized Switching Performance and Low Gate Charge Qg
- 650V/50A IGBT BLG50T65FLA with Positive Temperature Coefficient, Optimized Switching Performance and Low Gate Charge Qg
- 150V/173A N-channel Enhanced Power MOSFET BLP05N15 for Motor Drivers and High Current Applications
- IGBT BLQG50T65FCKA, is Characteristic with Low VCE(sat), Having Fast recovery anti-parallel diode
- Failure Modes of Power MOSFET in Photovoltaic Optimizer
This document is provided by Sekorm Platform for VIP exclusive service. The copyright is owned by Sekorm. Without authorization, any medias, websites or individual are not allowed to reprint. When authorizing the reprint, the link of www.sekorm.com must be indicated.