650V/50A IGBT BLG50T65FDLA which is Characteristic with Low VCE(sat), Optimized Switching Performance and Low Gate Charge Qg

2024-01-13 Shanghai Beiling
IGBT,BLG50T65FDLA,BLG50T65FDLA-F,BLG50T65FDLA-K

BLG50T65FDLA is obtained by advanced Trench Field Stop (T-FS) technology which is characteristic of low VCE(sat), optimized switching performance, and low gate charge Qg. The IGBT is a suitable device for Photovoltaic, UPS, and high switching frequency applications.



FEATURES 

Fast Switching 

Low VCE(sat) 

Positive temperature coefficient 

Fast recovery anti-parallel diode 

RoHS product 


APPLICATIONS

Photovoltaic converters 

UPS


ABSOLUTE RATINGS

Thermal characteristics

ORDERING INFORMATION

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