BLP042N10G MOSFET
●BLP042N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench II technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications.
■FEATURES
●Fast Switching
●Low On-Resistance
●Low Gate Charge
●Low Reverse transfer capacitances
●High avalanche ruggedness
●RoHS product
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[ Synchronous rectification ][ High speed switching applications ] |
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Datasheet |
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Please see the document for details |
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TO-220;TO-263 |
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English Chinese Chinese and English Japanese |
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4/2023 |
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Rev1.0 |
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1.3 MB |
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