100V/8A N-Channel Enhancement Mode MOSFET DM8N10MI, Providing Excellent RDS(ON) and Low Gate Charge
The DM8N10MI N-Channel Enhancement Mode MOSFET uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a battery protection or in other switching application.
General Features
VDS=100V ID=8A
RDS(ON)<100mΩ@VGS=10V（Type：80mΩ）
Application
Automative lighting
Load switch
PSE
Absolute Maximum Ratings (TC=25°C unless otherwise noted)
Electrical Characteristics@Tj=25℃(unless otherwise specified)
Note :
1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.
2、The data tested by pulsed , pulse width≦300μs , duty cycle≦2%
3、The power dissipation is limited by 150°C junction temperature
4、The data is theoretically the same as ID and IDM, in real applications , should be limited by total power dissipation.
Package Marking and Ordering Information
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