500V/28A N-Channel Enhancement Mode MOSFET 28N50 Provide a Excellent RDS(ON) ＜180mΩ@VGS=10V
The 28N50 N-Channel Enhancement Mode MOSFET uses advanced trench technology and design to provide excellent RDS(ON) with a low gate charge. It can be used in a wide variety of applications.
General Features
VDS=500V,ID=28A
RDS(ON)<180mΩ@VGS=10V
Application
High efficiency switch mode power supplies
Power factor correction
Electronic lamp ballast
Absolute Maximum Ratings@Tj=25℃(unless otherwise specified)
Electrical Characteristics (TC=25℃，unless otherwise noted)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%.
Package Marking and Ordering Information
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