220V/65A N-Channel Enhancement Mode Power MOSFETs VM2002 is Suit for 1.8V Gate Drive Applications
These N-Channel enhancement mode power field effect transistors VM2002 are using trench DMOS technology. This advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These N-Channel Enhancement Mode Power MOSFETs devices are well suited for high efficiency fast switching applications.
PPAK3X3 Pin Configuration
Features
20V,65A, RDS(ON)=4.9mΩ@VGS=4.5V
Improved dv/dt capability
Green Device Available
Suit for 1.8V Gate Drive Applications
Applications
Load Switch
POL Applications
SMPS 2nd SR
Li-Battery Protection
Absolute Maximum Ratings (Tc=25℃ unless otherwise noted)
Thermal Characteristics
Electrical Characteristics (TJ=25℃, unless otherwise noted)
Note :
1. Repetitive Rating: Pulsed width limited by maximum junction temperature.
2. VDD=15V,VGS=10V,L=0.1mH,IAS=49A,RG=25Ω,Starting TJ=25℃.
3. The data tested by pulsed, pulse width ≦ 300μs, duty cycle ≦ 2%.
4. Essentially independent of operating temperature.
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