80V/80A N-channel Enhanced Power MOSFET BLP06N08G Improved Switching Performance and Enhanced the Avalanche Energy
BLP06N08G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench II technology which reduces the conduction loss, improves switching performance, and enhances the avalanche energy. This is a suitable device for motor drivers and high-speed switching applications.
FEATURES
Fast Switching
Low On-Resistance
Low Gate Charge
Low Reverse transfer capacitances
High avalanche ruggedness
RoHS product
APPLICATIONS
Switching applications
Motor drivers
ABSOLUTE RATINGS (at TC=25℃，unless otherwise specified)
Note1：Repetitive Rating: Pulse width limited by maximum junction temperature
Note2：L=0.5mH, Ias=33A, Start TJ=25℃
Thermal characteristics
Electrical Characteristics (at TC=25℃，unless otherwise specified)
ORDERING INFORMATION
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