UMS CHA6282-QCB the New GaN Power Amplifier with covering 17.3-21.5GHz and High Pout of 36dBm
The CHA6282-QCB is a very versatile GaN Power Amplifier covering 17.3-21.5GHz which presents state-of-the-art features: High Pout of 36dBm, High Linear Gain of 30dB, High linearity NPR >13dB for 33dBm Pout and High PAE of 28% @ Psat. We can also underline its low consumption of 260mA at 18V.
The product is proposed in a 5x5, 28L MSL3 low-cost plastic QFN package.
The CHA6282-QCB is designed on a UMS GaN 0.15µm proprietary technology space evaluated. It is dedicated to Space and Satcom applications.
Key features:
Frequency band: 17.3-21.5GHz
Psat: 36dBm
PAE: 28% @ Psat
Linearity NPR: >13dB
Linear Gain: 30dB
DC Bias: 18V@260mA
QFN 28L 5x5 package
- 【Datasheet】CHA6282-QCB 17.3-21.5GHz GaN Power Amplifier: GaN Monolithic Microwave IC in SMD leadless package
- 【Datasheet】CHA6282-QCB 17.3-21.5GHz GaN Power Amplifier: GaN Monolithic Microwave IC in SMD leadless package
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