CHA6282-QCB 17.3-21.5GHz GaN Power Amplifier: GaN Monolithic Microwave IC in SMD leadless package
●The CHA6282-QCB is a three-stage GaN High Power Amplifier in the frequency band 17.3-21.5GHz. This HPA typically provides 4W output power associated to 28% of Power Added Efficiency. The circuit exhibits a small signal gain higher than 30dB. The overall power supply is 18V/260mA.
●The circuit is a very versatile amplifier for high performance systems.
●The circuit is dedicated to Space applications and well suited for a wide range of microwave applications and systems.
●The product is developed on a robust 0.15µm gate length GaN on SiC HEMT process and is provided on low cost SMD RoHS compliant plastic package.
■Main Features:
●17.3-21.5GHz frequency range
●Linear gain is 30 dB
●Pout=36dBm for Pin=18dBm
●NPR > 13dB for Pout = 2Watts
●PAE=28% at Psat
●DC bias: Vd=18Volts @ Idq=260mA
●28 Leads - QFN 5x5mm²
●MSL3
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GaN Power Amplifier 、 GaN Monolithic Microwave IC 、 three-stage GaN High Power Amplifier |
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[ Space applications ][ microwave applications ][ microwave systems ] |
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Datasheet |
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Please see the document for details |
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SMD;QFN;QFN 5x5 |
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English Chinese Chinese and English Japanese |
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30 Nov 22 |
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DSCHA6282-QCB2334 |
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1.9 MB |
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