Try GaN GH25 MPW With UMS EUROPEAN LEADER in RF MMIC products and foundry services
●UMS launches a shared foundry run on its GH25 GaN process.
●GH25 is a space evaluated 0.25μm HEMT GaN on SiC substrate technology for very high power applications. With GH25, you will be able to design your own , power bars and multi-function components. You will be supported by excellent PDK and models:
▲highly accurate non-linear scalable models supporting electro-thermal capabilities,
▲Stack for EM simulators,
▲DRC for layout rules verification.
|
|
|
|
|
|
|
Technical Documentation |
|
|
|
|
Please see the document for details |
|
|
|
|
|
|
|
|
|
|
|
English Chinese Chinese and English Japanese |
|
|
2019/03/28 |
|
|
|
|
|
|
|
|
508 KB |
- +1 Like
- Add to Favorites
Recommend
- Try The RF GaN Power with GH25 MPW
- UMS Enlarges its Telecom Power Amplifier Offer, Boosting your radio with UMS Power Amplifiers
- UMS Proposes New Version of the ADS PPH15X Design Kit
- UMS and Fraunhofer IIS Partner to Offer GaN and GaAs Technologies to EUROPRACTICE Customers
- UMS Announced A New Version of GH15 Gan Technology with Bcb Mechanical Protection and A High-density Mim Capacitor
- UMS Bare Die GaN Power Bars are Available in Hermetic, Plastic, or Flange Packages
- DGA Entrusted UMS to Develop A European GaN-on-SiC Technology with The Realisation of The Art Ku
- UMS Has Designed a 6-42GHz 1W, 2W, 4W Power Amplifiers to Cover the Point To Point Telecom Market
All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.
Integrated Circuits
Discrete Components
Connectors & Structural Components
Assembly UnitModules & Accessories
Power Supplies & Power Modules
Electronic Materials
Instrumentation & Test Kit
Electrical Tools & Materials
Mechatronics
Processing & Customization
