Try GaN GH25 MPW With UMS EUROPEAN LEADER in RF MMIC products and foundry services
●UMS launches a shared foundry run on its GH25 GaN process.
●GH25 is a space evaluated 0.25μm HEMT GaN on SiC substrate technology for very high power applications. With GH25, you will be able to design your own , power bars and multi-function components. You will be supported by excellent PDK and models:
▲highly accurate non-linear scalable models supporting electro-thermal capabilities,
▲Stack for EM simulators,
▲DRC for layout rules verification.
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Technical Documentation |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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2019/03/28 |
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508 KB |
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