Try GaN GH25 MPW With UMS EUROPEAN LEADER in RF MMIC products and foundry services
●GH25 is a space evaluated 0.25μm HEMT GaN-on-SiC substrate technology for very high power applications. With GH25, you will be able to design your own GaN HPAs, LNAs, switches, diodes, MMICs, power bars and multi-function components. You will be supported by excellent PDK and models:
■highly accurate non-linear scalable models supporting electro-thermal capabilities
■Stack for EM simulators
■DRC for layout rules verification.
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Application note & Design Guide |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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2022/12/21 |
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659 KB |
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