UMS launches a shared foundry run on its GH25 GaN process

PublishTime：2022-04-18

GH25 is a space evaluated 0.25μm HEMT GaN-on-SiC substrate technology for very high power applications. With GH25, you will be able to design your own GaN HPAs, LNAs, switches, diodes, MMICs, power bars and multi-function components. You will be supported by excellent PDK and models:
▲highly accurate non-linear scalable models supporting electro-thermal capabilities
▲Stack for EM simulators
▲DRC for layout rules verification

Brand of Product：	UMS
Part#：	GH25 More Part#
Product Category：	GaN process More
Application：	[ high power applications ] More
Data Type：	Solutions More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：
Language：	English Chinese Chinese and English Japanese
Date of Creation：	2022/3/21
Version Number：
Data Encoding：
Data Size：	659 KB

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