IGN0912LM500 | RF Power Transistor IGN0912LM500A

PublishTime：2025-03-16

IGN0912LM500和IGN0912LM500A是高功率GaN-on-SiC射频功率晶体管，专为满足IFF/SSR航空电子系统、军事战术数据链和TACAN/DME系统的需求而设计。它们在960-1220MHz的全瞬时带宽内运行。IGN0912LM500在ELM模式S脉冲条件下提供至少500W的峰值输出功率，而IGN0912LM500A在Link 16脉冲条件下提供至少500W的峰值输出功率，均具有典型的18dB增益和65%效率。它们从50V电源电压运行。为了最佳的热效率，晶体管封装在金属基封装中，带有环氧密封的陶瓷盖。

Brand of Product：	Integra Technologies
Part#：	IGN0912LM500 、 IGN0912LM500A More Part#
Product Category：	RF Power Transistor More
Application：	[ L-band Avionics IFF & SSR Systems ][ TACAN/DME Systems ] More
Data Type：	Datasheet More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：	PL44C1
Language：	English Chinese Chinese and English Japanese
Date of Creation：
Version Number：	IGN0912LM500-REV-NC-DS-REV-B
Data Encoding：
Data Size：	379 KB

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