IGN0912L250M | RF Power Transistor IGN0912L250MS

PublishTime：2025-03-16

IGN0912L250M 和 IGN0912L250MS 是高功率 GaN-on-SiC RF 功率晶体管，专为满足 IFF/SSR 航空电子系统、军事战术数据链和 TACAN/DME 系统的需求而设计。它们在 960-1220MHz 的全瞬时带宽内运行。在 Link 16 [444x (7µs on, 6µs off), 22.7% 长期负载周期] 脉冲条件下，它们提供至少 250W 的峰值输出功率，典型增益为 17dB，效率为 50%。它们从 50V 电源电压运行。为了最佳的热效率，晶体管封装在金属基封装中，带有环氧密封的陶瓷盖。

Brand of Product：	Integra Technologies
Part#：	IGN0912L250M 、 IGN0912L250MS More Part#
Product Category：	RF 功率晶体管 More
Application：	[ Link 16 应用 ][ TACAN/DME 系统 ] More
Data Type：	Datasheet More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：	PL44C1
Language：	English Chinese Chinese and English Japanese
Date of Creation：
Version Number：	IGN0912L250M-REV-NC-DS-REV-B
Data Encoding：
Data Size：	334 KB

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