IGN0912L250A | RF Power Transistor-IGN0912L250AS

PublishTime：2025-03-16

IGN0912L250A和IGN0912L250AS是高功率GaN-on-SiC射频功率晶体管，专为IFF/SSR航空电子系统、军事战术数据链和TACAN/DME系统设计。它们在960-1220MHz的全瞬时带宽内运行。在Link 16脉冲条件下，它们提供至少250W的峰值输出功率，典型增益为17.5dB，效率为65%。它们由一个金属基封装和环氧密封的陶瓷盖组成，以实现最佳热效率。

Brand of Product：	Integra Technologies
Part#：	IGN0912L250A 、 IGN0912L250AS More Part#
Product Category：	射频功率晶体管 More
Application：	[ Link 16应用 ][ TACAN/DME系统 ] More
Data Type：	Datasheet More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：	PL44C1
Language：	English Chinese Chinese and English Japanese
Date of Creation：
Version Number：	IGN0912L250A-REV-PR1-DS-REV-C
Data Encoding：	DS-IGN0912L250A
Data Size：	299 KB

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