IGN0450M250 | RF Power Transistor IGN0450M250S

PublishTime：2025-03-16

IGN0450M250 和 IGN0450M250S 是高功率 GaN-on-SiC RF 功率晶体管，专为满足 P 波段雷达系统的独特需求而设计。它们在 420-450 MHz 的全频段内工作。在 100ms、10% 负载周期脉冲条件下，它们提供至少 250 W 的峰值输出功率，典型增益超过 24 dB，效率达到 75%。它们由 50 V 电源供电。为了实现最佳热效率，晶体管采用金属基封装，并配有环氧密封的陶瓷盖。

Brand of Product：	Integra Technologies
Part#：	IGN0450M250 、 IGN0450M250S More Part#
Product Category：	RF 功率晶体管 More
Application：	[ P 波段雷达系统 ] More
Data Type：	Datasheet More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：	PL44C1
Language：	English Chinese Chinese and English Japanese
Date of Creation：	未提供
Version Number：	Preliminary - REV A
Data Encoding：	未提供
Data Size：	396 KB

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