IGN0450M850 | RF Power Transistor-IGN0450M850S

PublishTime：2025-03-16

IGN0450M850和IGN0450M850S是高功率GaN-on-SiC射频功率晶体管，专为满足P波段雷达系统的独特需求而设计。它们在400-450 MHz的全频段内运行。在300ms、10%占空比的脉冲条件下，它们提供至少850W的峰值输出功率，典型增益超过20 dB，效率达到75%。它们由50 V电源供电。为了最佳的热效率，晶体管封装在金属基封装中，带有环氧密封的陶瓷盖。

Brand of Product：	Integra Technologies
Part#：	IGN0450M850 、 IGN0450M850S More Part#
Product Category：	GaN-on-SiC射频功率晶体管 More
Application：	[ P波段雷达系统 ] More
Data Type：	Datasheet More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：	金属基封装
Language：	English Chinese Chinese and English Japanese
Date of Creation：
Version Number：	IGN0450M850-REV-PR1-DS-B
Data Encoding：
Data Size：	418 KB

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